Atomic layer deposition of Al2O3 on V2O5 xerogel film for enhanced lithium-ion intercalation stability

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Atomic layer deposition of Al2O3 on V2O5 xerogel film for enhanced lithium-ion intercalation stability

V2O5 xerogel films were fabricated by casting V2O5 sols onto fluorine-doped tin oxide glass substrates at room temperature. Five, ten and twenty atomic layers of Al2O3 were grown onto as-fabricated films respectively. The bare film and Al2O3-deposited films all exhibited hydrous V2O5 phase only. Electrochemical impedance spectroscopy study revealed increased surface charge-transfer resistance o...

متن کامل

Enhanced Lithium-Ion Intercalation Properties of V2O5 Xerogel Electrodes with Surface Defects

Enhanced Lithium-Ion Intercalation Properties of V2O5 Xerogel Electrodes with Surface Defects Dawei Liu, Yanyi Liu, Anqiang Pan, Kenneth P. Nagle, Gerald T. Seidler, Yoon-Ha Jeong, and Guozhong Cao* Department of Materials Science and Engineering, University of Washington, Seattle, Washington, United States Department of Materials Science and Engineering, Central South University, Changsha, Chi...

متن کامل

V2O5 xerogel electrodes with much enhanced lithium-ion intercalation properties with N2 annealing

V2O5 xerogel films were fabricated by casting V2O5 sols onto FTO glass substrates and annealing at 300 C for 3 hours in nitrogen and air. The films annealed in nitrogen and air possessed different grain size and crystallinity. Optical absorption measurements and electrochemical impedance analyses revealed a reduced optical bandgap and enhanced electrical conductivity of N2 annealed V2O5 film. L...

متن کامل

Epitaxial graphene surface preparation for atomic layer deposition of Al2O3

Atomic layer deposition was employed to deposit relatively thick ( 30 nm) aluminum oxide (Al2O3) using trimethylaluminum and triply-distilled H2O precursors onto epitaxial graphene grown on the Si-face of silicon carbide. Ex situ surface conditioning by a simple wet chemistry treatment was used to render the otherwise chemically inert graphene surface more amenable to dielectric deposition. The...

متن کامل

Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition

Growing high-quality and uniform dielectric on black phosphorus is challenging since it is easy to react with O2 or H2O in ambient. In this work, we have directly grown Al2O3 on BP using plasma-enhanced atomic layer deposition (PEALD). The surface roughness of BP with covered Al2O3 film can reduce significantly, which is due to the removal of oxidized bubble in BP surface by oxygen plasma. It w...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

سال: 2012

ISSN: 0734-2101,1520-8559

DOI: 10.1116/1.3664115